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IEEE

200 V All-SiC Floating Gate Driver Process Platform on 4H-SiC P-epi/N+ Substate for High-Temperature Applications

Abstract: This brief reports a 200 V all-SiC integration process platform integrating low-voltage (LV) and high-voltage (HV) devices, such as LV nMOS, LV pMOS, resistor, capacitor, HV lateral DMOS ...