Abstract: A device architecture with n-MOS and p-MOS transistors stacked on top of each other is considered a key option to continue scaling in the semiconductor industry. We report experimental ...
Abstract: Existing literature has primarily focused on using gate signals for short-circuit type I detection (Hard Switch Fault, HSF). However, an unaddressed aspect remains in detecting the ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results