Abstract: In this letter, a novel radiation leakage stabilization circuit (LSC) using Semi-Conductor Laboratory (SCL) 180-nm metal oxide semiconductor capacitor technology-based ionizing radiation ...
Abstract: This study explores the total-ionizing-dose (TID) and displacement damage (DD) effects in trench silicon carbide (SiC) power MOSFETs. The effects of X-ray irradiation reveal significant ...
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