Abstract: Heavy-ion data suggest that a common mechanism is responsible for single-event burnout (SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly, heavy-ion data ...
Abstract: Crosstalk between single-photon avalanche diodes (SPADs) fabricated by the standard CMOS process is extensively investigated. The dependence of device structure, device-to-device distance, ...
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