Abstract: The blanket boron implant (BBI) in the sigma-shaped trench before the embedded SiGe (eSiGe) source/drain (S/D) formation for 28-nm PMOSFET is proposed in this letter. It is demonstrated that ...
Trench drains are usually used as floor drains, but they are also used as storm sewers or water pipes. However, trench drains are not always effective for proper drainage. Slots drains are built ...
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